Field effect transistor with short channel and manufacturing met

Details Field effect transistor with short channel and manufacturing met Field effect transistor with short channel and manufacturing met

1995-02-21

1995-09-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257336, H01L 3300, H01L 29161

Patent

active

054499372

ABSTRACT:
On a p-type semiconductor substrate (well region) there are arranged apart from each other an n-type source region and an n-type drain region, a channel region therebetween, and a gate electrode. A pair of p-type channel diffusion regions doped more heavily than the substrate are formed along the channel boundary between the source region and the drain region and the substrate. The channel diffusion region below the drain region is doped with an n-type impurity to achieve a lower active impurity concentration relative to that in the channel diffusion region below the gate electrode.

REFERENCES:
Odanaka et al, "A New Half Micron p-Channel MOSFET", IEEE Trans or ED, vol. ED-33, No. 3, Mar. 1986, pp. 317-321.
Young, "Metal Oxide Semi--Conductor FET...,", IBM Tech, vol. 17, #4, Sept. 1974, pp. 128-129.
Krieger et al, "Shadowing Effects due to Tilter As...Implant", IEEE Trans on ED, vol. 36, #11, Nov. 1989, pp. 2458-2461.
"A Novel Source-to-Drain Nonuniformly Doped Channel (NUDC) MOSFET for High Current Drivability and Threshold voltage Controllability", Y. Okumura et al., LSI R & D Laboratory, Mitsubishi Electric Corp., Japan, 1990 IEEE.

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