Field effect transistor with raised source/drain fin straps

Details Field effect transistor with raised source/drain fin straps Field effect transistor with raised source/drain fin straps

2008-07-30

2010-12-14

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S151000, C438S156000, C438S157000, C438S173000, C438S192000, C438S193000, C438S206000, C438S212000, C438S259000, C438S268000, C438S300000

Reexamination Certificate

active

07851283

ABSTRACT:
Therefore, disclosed above are embodiments of a multi-fin field effect transistor structure (e.g., a multi-fin dual-gate FET or tri-gate FET) that provides low resistance strapping of the source/drain regions of the fins, while also maintaining low capacitance to the gate by raising the level of the straps above the level of the gate. Embodiments of the structure of the invention incorporate either conductive vias or taller source/drain regions in order to electrically connect the source/drain straps to the source/drain regions of each fin. Also, disclosed are embodiments of associated methods of forming these structures.

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