Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-11-09
1995-05-23
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 39, 257410, 365117, 365145, 501134, H01L 2978, H01L 3922, G11C 1122, C04B 3546
Patent
active
054183898
ABSTRACT:
A field-effect transistor (FET) is described having a source; a drain; a channel formed between the source and the drain; and a gate electrode. The channel is composed of a film layer of oxide having the perovskite structure comprised of: (1) at least one metal selected from the group consisting of the metal elements in Group IV through Group XI of the Periodic Table of Elements and Bi; and (2) at least one metal selected from the group consisting of alkali metals, alkaline earth metals and rare earth metals. The layer has a film thickness of not larger than 1000 .ANG. and the electrical resistivity not less than 2 million centimeters. The channel of the oxide film layer is provided with a metal oxide insulator layer formed directly or through another metal oxide insulator layer and a gate electrode in electrical contact therewith. It is possible to make memories using this FET. In addition, it also becomes possible to reduce the size of devices using the FET of the invention.
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Mitsubishi Chemical Corporation
Saadat Mahshid D.
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