Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2006-05-15
2010-10-19
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S388000, C257SE29134, C257SE29158, C257S412000
Reexamination Certificate
active
07816707
ABSTRACT:
An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased.
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Hikita Masahiro
Tanaka Tsuyoshi
Ueda Tetsuzo
Uemoto Yasuhiro
Yanagihara Manabu
Andújar Leonardo
Arroyo Teresa M
McDermott Will & Emery LLP
Panasonic Corporation
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