Field effect transistor with narrow bandgap source and drain...

Details Field effect transistor with narrow bandgap source and drain... Field effect transistor with narrow bandgap source and drain...

2008-12-23

2010-11-02

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S366000, C438S471000

Reexamination Certificate

active

07825481

ABSTRACT:
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of source/drain regions are formed on opposite sides of the gate electrode wherein said pair of source/drain regions comprise a narrow bandgap semiconductor film formed in the silicon layer on opposite sides of the gate electrode.

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