Field effect transistor with metal oxide gate insulator and...

Details Field effect transistor with metal oxide gate insulator and... Field effect transistor with metal oxide gate insulator and...

2005-08-16

2005-08-16

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S410000, C257S411000

Reexamination Certificate

active

06930335

ABSTRACT:
Provided is a semiconductor device including a silicon substrate, a gate insulator disposed on the silicon substrate and containing a metal oxide, a gate electrode disposed on the gate insulator, and a sidewall insulating film disposed on a side of the gate insulator and the gate electrode and containing aluminum, silicon, oxygen and nitrogen.

REFERENCES:
patent: 5134451 (1992-07-01), Katoh
patent: 5783475 (1998-07-01), Ramaswami
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6486080 (2002-11-01), Chooi et al.
patent: 6531324 (2003-03-01), Hsu et al.
patent: 6784508 (2004-08-01), Tsunashima et al.
Ogawa, S., et al., Silicon-Aluminum Oxynitride Composite Films Deposited by Reactive Ion Beam Sputtering, Ion Implantation Technology Proceedings, 1998 International Conference, vol. 2, Jun. 22-26, 1998, pp. 775-778.
Toshihiko Miyashita, et al., “Experimental Evaluation of Depth-Dependent Lateral Standard Deviation For Various Ions In a-Si From One-Dimensional Tilted Implatation Profiles”, IEEE Transactions on Electron Devices, vol., 46, No. 9, Sep. 1999, pp. 1824-1828.
David H. Lim et al., “An Accurate and Computationally-Efficient Model of Boron Implantation Through Screen Oxide Layers Into (100) Single-Crystal Silicon”, 1991 IEDM Tech. Dig. (1993), pp. 291-294.

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