Field-effect transistor with a trench isolation structure and a

Details Field-effect transistor with a trench isolation structure and a Field-effect transistor with a trench isolation structure and a

1998-10-01

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438424, 438425, 438296, H01L 2176

Patent

active

060636947

ABSTRACT:
Into the portion of a silicon substrate which lies in the vicinity of a trench isolation portion, ions such as argon for enhancing the oxidation rate are implanted. Or, nitrogen ions for lowering the oxidation rate are implanted into the portion of the silicon substrate other than the portion thereof lying in the vicinity of the trench isolation portion. Thereafter, thermal oxidation is performed, so that a gate insulation film is formed in such a manner that the thickness thereof becomes equal to or greater than the thickness of the center portion thereof. Thus, the deterioration of the breakdown voltage of the insulation film can be prevented, because the gate insulation film becomes thin in the end portion of the gate electrode.

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