Field effect transistor with a lightly doped drain

Details Field effect transistor with a lightly doped drain Field effect transistor with a lightly doped drain

1993-04-12

1994-09-20

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257345, 257408, 437 27, 437 40, 437 44, 437 48, 437913, H01L 2906, H01L 21268

Patent

active

053492250

ABSTRACT:
A transistor device 10 formed in a semiconductor layer 12 is disclosed herein. A first source/drain region 14 is formed in the semiconductor layer 12. A second source/drain region 16 is also formed in the semiconductor layer 12 and is spaced from the first source/drain region 14 by a channel region 18. The second source/drain region 16 includes (1) a lightly doped portion 16b adjacent the channel region 18 and abutting the top surface, (2) a main portion 16a abutting the top surface and spaced from the channel region 18 by the lightly doped portion 16b, and (3) a deep portion 16c formed within the layer 12 and spaced from the top surface by the lightly doped portion 16b and the main portion 16a. A gate electrode 20 is formed over at least a portion of the channel region 18 and insulated therefrom.

REFERENCES:
patent: 4376947 (1983-03-01), Chiu et al.
patent: 5021353 (1991-06-01), Lowrey et al.
patent: 5026657 (1991-06-01), Lee et al.
patent: 5079611 (1992-01-01), Ikeda et al.
patent: 5202576 (1993-04-01), Liu et al.
patent: 5264384 (1993-11-01), Kaya et al.

Affiliated with

Also associated with

Rating

Field effect transistor with a lightly doped drain does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor with a lightly doped drain, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor with a lightly doped drain will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2430153