Field-effect transistor with a gate having a plurality of...

Details Field-effect transistor with a gate having a plurality of... Field-effect transistor with a gate having a plurality of...

2004-11-08

2008-12-23

Smith, Zandra (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S266000, C257S288000, C257S331000, C257S401000

Reexamination Certificate

active

07468539

ABSTRACT:
A field-effect transistor includes a substrate of a first conductivity type, and a channel diffusion region of a second conductivity type provided in the first conductivity type substrate. The transistor also includes a first conductivity type contact region provided in the second conductivity type channel diffusion region, and an electrode wiring connected to the first conductivity type source contact region and second conductivity type source contact region. A surface insulating film is provided on the second conductivity type channel diffusion region. A plurality of linear gate electrodes are provided on the surface insulating film. The gate electrodes are parallel to each other. The spacing between the gate electrodes is less than the thickness of the surface insulating film.

REFERENCES:
patent: 3786319 (1974-01-01), Tomisaburo
patent: 5043779 (1991-08-01), Nishimura
patent: 5621234 (1997-04-01), Kato
patent: 5789791 (1998-08-01), Bergemont
patent: 6768167 (2004-07-01), Nagaoka et al.
patent: 6773995 (2004-08-01), Shin et al.
patent: 5-055584 (1993-03-01), None
patent: 5-055592 (1993-03-01), None

Affiliated with

Also associated with

Rating

Field-effect transistor with a gate having a plurality of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-effect transistor with a gate having a plurality of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-effect transistor with a gate having a plurality of... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4036455