Field effect transistor using vanadium dioxide layer as...

Details Field effect transistor using vanadium dioxide layer as... Field effect transistor using vanadium dioxide layer as...

2005-08-23

2005-08-23

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S043000, C257S192000, C257S289000, C257S410000, C438S085000, C438S086000, C438S104000

Reexamination Certificate

active

06933553

ABSTRACT:
Provided is a field effect transistor. The field effect transistor includes an insulating vanadium dioxide (VO2) thin film used as a channel material, a source electrode and a drain electrode disposed on the insulating VO2thin film to be spaced apart from each other by a channel length, a dielectric layer disposed on the source electrode, the drain electrode, and the insulating VO2thin film, and a gate electrode for applying a predetermined voltage to the dielectric layer.

REFERENCES:
patent: 6333543 (2001-12-01), Schrott et al.
patent: 6624463 (2003-09-01), Kim et al.
D.M.Newns et al., “Mott transition field effect transistor”, Applied Physc. Lett, (73) 1998, pp 780.
C.Zhou et al., “A field effect transistor based on the MOtt transition in a molecular layer”, Appl. Phys.Lett., (70), 1997, pp 598.

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