Field-effect transistor using a group III-V compound...

Details Field-effect transistor using a group III-V compound... Field-effect transistor using a group III-V compound...

2005-03-15

2005-03-15

Baumeister, Bradley William (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S024000

Reexamination Certificate

active

06867439

ABSTRACT:
A high electron mobility transistor using a Group III-V compound semiconductor comprises an undoped second channel layer laminated on an InP substrate via a buffer layer, an undoped first channel layer laminated on the second channel layer, and a doped electron-supplying layer laminated on the first channel layer. The first channel layer is composed of In1-xGaxAs and has an energy level of conduction band lower than that of the electron-supplying layer at the interface. The second channel layer is composed of a Group III-V compound semiconductor using a Group V element other than P, has an energy level of conduction band higher than that of the first channel layer, and has a band gap wider than that of the first channel layer.

REFERENCES:
patent: 5373168 (1994-12-01), Ando et al.
patent: 5432356 (1995-07-01), Imamura
patent: 5596211 (1997-01-01), Onda et al.
patent: 5825796 (1998-10-01), Jewell et al.
patent: 6100542 (2000-08-01), Kohara et al.
patent: 4-291934 (1992-10-01), None
patent: 6-236898 (1994-08-01), None
English translation of JP 4-291934.*
JPO machine translation of JP 6-236898.*
JPO computer translation of JP 6-236898.

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