Field-effect transistor type semiconductor sensor

Details Field-effect transistor type semiconductor sensor Field-effect transistor type semiconductor sensor

1991-08-23

1993-03-02

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

307261, 307278, 307304, 73777, 73754, 257254, 257415, H03K 300, H01L 2966

Patent

active

051912376

ABSTRACT:
A semiconductor sensor for detecting physical quantities such as pressure, acceleration, mechanical vibration, etc. includes a semiconductor substrate, and a field-effect transistor on the semiconductor substrate, the field-effect transistor having a source, a drain, and a gate. A gate voltage is between the source and the gate to cause a drain current between the source and the drain, the drain current being variable with an external force applied to the field-effect transistor, whereby the external force can be detected on the basis of a change in the drain current. The drain current which flows when no external force is applied to the field-effect transistor is selected to be 1/3 or less of a drain current which flows when the gate and the source are shorted, or to be in the vicinity of a value that maximizes the ratio of a change in the drain current which flows when the external force is applied to the field-effect transistor to a change in the drain current which flows when no external force is applied to the field-effect transistor.

REFERENCES:
patent: 3582690 (1971-06-01), Yerman
patent: 4275406 (1981-06-01), Muller et al.
patent: 4576052 (1986-03-01), Sugiyama
patent: 4633099 (1986-12-01), Tanabe et al.
patent: 4670969 (1987-06-01), Yamada et al.
patent: 4706100 (1987-11-01), Tufte
patent: 4961833 (1990-10-01), Sakai et al.

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