Field effect transistor structure heavily doped source/drain reg

Details Field effect transistor structure heavily doped source/drain reg Field effect transistor structure heavily doped source/drain reg

1994-10-03

1995-06-06

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257408, 257900, H01L 2910, H01L 2978, H01L 2906

Patent

active

054225060

ABSTRACT:
A field effect transistor structure includes heavily doped source/drain regions and lightly doped source/drain regions, The lightly doped source/drain regions extend form the source drain regions partway under a sidewall spacer adjacent a gate electrode. Very lightly doped source/drain regions extend the remainder of the way under the sidewall spacers to provide improved transistor characteristics.

REFERENCES:
patent: 4656492 (1987-04-01), Sumani et al.
patent: 4818715 (1989-04-01), Chao
patent: 4935379 (1990-06-01), Toyoshima
patent: 4949136 (1990-08-01), Jain
patent: 4981810 (1991-01-01), Fazan et al.
patent: 5091763 (1992-02-01), Sanchez

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