Field effect transistor structure and method

Details Field effect transistor structure and method Field effect transistor structure and method

1991-04-01

1992-12-15

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437 45, 437 46, H01L 21265

Patent

active

051717000

ABSTRACT:
After formation of gate electrodes in a field effect device, first lightly doped drain regions, and opposite contactivity type halo regions, are formed by implant into the substrate. A first thin oxide layer is then formed over the device, followed by an implant of a second lightly doped drain region. The second lightly doped drain region will be spaced further from the channel of the field effect device than the first lightly doped drain region by the thickness of the thin oxide layer. A second oxide layer is then formed over the device, followed by an anisotropic etch back to form sidewall regions alongside the gate electrode of the device. The sidewall regions are used to align the heavy impurity implant for forming source/drain regions.

REFERENCES:
patent: 4746624 (1988-05-01), Cham et al.
patent: 4906589 (1990-03-01), Chao
patent: 4925807 (1990-05-01), Yoshikawa
patent: 4968639 (1990-11-01), Bergonzoni
patent: 5015599 (1991-05-01), Verhaar
patent: 5032530 (1991-07-01), Lowrey et al.

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