Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-03-09
2009-02-17
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S642000, C257SE51007, C257SE51005, C438S099000
Reexamination Certificate
active
07491967
ABSTRACT:
There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.
REFERENCES:
patent: 6617609 (2003-09-01), Kelley et al.
patent: 6891237 (2005-05-01), Bao et al.
patent: 7094625 (2006-08-01), Miura et al.
patent: 7193237 (2007-03-01), Aramaki et al.
patent: 2003/0226996 (2003-12-01), Aramaki et al.
patent: 2005/0202348 (2005-09-01), Nakayama et al.
patent: 2006/0081880 (2006-04-01), Miyazaki et al.
patent: 2006/0145141 (2006-07-01), Miura et al.
patent: 2006/0214159 (2006-09-01), Nakayama et al.
patent: 5-55568 (1993-03-01), None
patent: 5-190877 (1993-07-01), None
patent: 2003-304014 (2003-10-01), None
patent: 2004-6750 (2004-01-01), None
patent: 03/041186 (2003-05-01), None
patent: 2004/012271 (2004-02-01), None
T. Akiyama, et al., “Synthesis of .pai.-system-expanded compounds using Diels-Alder reactions”, Proceedings of the 81st Annual Spring Meeting of the Chemical Society of Japan, 2002, II, p. 990, 2F9-14. (with translation).
A. R. Brown, et al., “Precursor route pentacene metal-insulator-semiconductor field-effect transistors”, Journal of Applied Physics, vol. 79, No. 4, Feb. 15, 1996, pp. 2136-2138.
Christos D. Dimitrakopoulos, et al., “Organic Thin Film Transistors for Large Area Electronics”, Advanced Materials, vol. 14, No. 2, Jan. 16, 2002, pp. 99-117.
W. Nakwaski, et al., “Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers”, Japanese Journal of Applied Physics, vol. 30, No. 4A, Apr. 1991, pp. L596-L598.
H. Sirringhaus, et al., “Two-dimensional charge transport in self-organized, high-mobility conjugated polymers”, Nature, vol. 401, Oct. 14, 1999, pp. 685-688.
Kubota Makoto
Masumoto Akane
Miura Daisuke
Miyachi Makiko
Nakayama Tomonari
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Maldonado Julio J.
Smith Matthew
LandOfFree
Field effect transistor, method of producing the same, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor, method of producing the same, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor, method of producing the same, and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4070350