Field effect transistor, method of producing the same, and...

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

Reexamination Certificate

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C257S642000, C257SE51007, C257SE51005, C438S099000

Reexamination Certificate

active

07491967

ABSTRACT:
There is provided a field effect transistor having an organic semiconductor layer, including: an organic semiconductor layer containing at least porphyrin; and a layer composed of at least a polysiloxane compound, the layer being laminated on the organic semiconductor layer so as to be in intimate contact with the organic semiconductor layer. As a result, there can be provided a field effect transistor which enables an organic semiconductor layer having high crystallinity and high orientation to be formed and which exhibits a high mobility.

REFERENCES:
patent: 6617609 (2003-09-01), Kelley et al.
patent: 6891237 (2005-05-01), Bao et al.
patent: 7094625 (2006-08-01), Miura et al.
patent: 7193237 (2007-03-01), Aramaki et al.
patent: 2003/0226996 (2003-12-01), Aramaki et al.
patent: 2005/0202348 (2005-09-01), Nakayama et al.
patent: 2006/0081880 (2006-04-01), Miyazaki et al.
patent: 2006/0145141 (2006-07-01), Miura et al.
patent: 2006/0214159 (2006-09-01), Nakayama et al.
patent: 5-55568 (1993-03-01), None
patent: 5-190877 (1993-07-01), None
patent: 2003-304014 (2003-10-01), None
patent: 2004-6750 (2004-01-01), None
patent: 03/041186 (2003-05-01), None
patent: 2004/012271 (2004-02-01), None
T. Akiyama, et al., “Synthesis of .pai.-system-expanded compounds using Diels-Alder reactions”, Proceedings of the 81st Annual Spring Meeting of the Chemical Society of Japan, 2002, II, p. 990, 2F9-14. (with translation).
A. R. Brown, et al., “Precursor route pentacene metal-insulator-semiconductor field-effect transistors”, Journal of Applied Physics, vol. 79, No. 4, Feb. 15, 1996, pp. 2136-2138.
Christos D. Dimitrakopoulos, et al., “Organic Thin Film Transistors for Large Area Electronics”, Advanced Materials, vol. 14, No. 2, Jan. 16, 2002, pp. 99-117.
W. Nakwaski, et al., “Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers”, Japanese Journal of Applied Physics, vol. 30, No. 4A, Apr. 1991, pp. L596-L598.
H. Sirringhaus, et al., “Two-dimensional charge transport in self-organized, high-mobility conjugated polymers”, Nature, vol. 401, Oct. 14, 1999, pp. 685-688.

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