Field effect transistor manufacturing method

Details Field effect transistor manufacturing method Field effect transistor manufacturing method

2005-11-09

2010-11-09

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S482000, C438S485000, C257SE21497

Reexamination Certificate

active

07829444

ABSTRACT:
Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

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