Field effect transistor including silicon oxide film and nitride

Details Field effect transistor including silicon oxide film and nitride Field effect transistor including silicon oxide film and nitride

1992-08-18

1994-11-29

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257346, 257408, H01L 2978

Patent

active

053692977

ABSTRACT:
An N type field effect transistor having a higher resistivity to hot carriers and exhibiting a higher current handling capability even when used at a low gate voltage, and a method of manufacturing such a transistor are provided. A nitrided oxide film is formed on a drain avalanche hot carrier injection region. The nitrided oxide film is highly resistive to drain avalanche hot carriers as compared to a silicon oxide film. The silicon oxide film is formed on a channel hot electron injection region. The silicon oxide film is highly resistive to channel hot electrons as compared to the nitrided oxide film. A major portion of a gate insulator film is a silicon oxide film. The silicon oxide film exhibits a higher current handling capability at a low gate voltage as compared to the nitrided oxide film.

REFERENCES:
patent: 4623912 (1986-11-01), Chang et al.
patent: 5034798 (1991-07-01), Ohsima
Takashi Hori, "Demands for Submicron MOSFET's and Nitrided Oxide Gate-Dielectrics", Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo 1989, pp. 197-200.
Hisayo S. Momose et al., "Hot Carrier Related Phenomena for N-and P-Mosfets with Nitrided Gate Oxide by RTP", IEDM 1989, pp. 167-170.
Eiji Takeda et al., "An As-P(N+-N-) Double Diffused Drain Mosfet for VLSIS" 1982 Symposium on VLSI Technology Digest, pp. 40-41.
Pieter Balk, "The Si-Si02 System", Materials Science Monographs, 32. 1988.
S. Kusunoki et al., "Hot-Carrier-Resistant Structure by Re-Oxidized Nitrided Oxide Sidewall for Highly Reliable and High Performance LDD MOSFETS", IEDA 91, pp. 1-4.
T. Mizuno et al., "High Dielectric LDD Spacer Technology for High Performance MOSFET Using Gate-Fringing Field Effects" IEDM 89, pp. 613-616.
T. Hori et al., "Ultra-Thin Re-Oxidized Nitrided-Oxides Prepared by Rapid Thermal Processing" IEDM 87, pp. 570-573.

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