Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1992-12-08
1994-02-08
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 25, 257194, H01L 2712
Patent
active
052850811
ABSTRACT:
A field effect transistor has a quantum well structure covered with an n-type cap layer, and control gate electrodes are provided on the cap layer on both sides of a gate electrode between source and drain electrodes, wherein the gate electrode and the control gate electrodes are biased in such a manner as to produce quasi one-dimensional electron gas under electron resonance for allowing current to flow between the source and drain electrodes, and the quasi one-dimensional electron gas is much narrower than the gate electrode patterned through a lithographic process so that the field effect transistor is free from controllable limits of the lithographic process.
REFERENCES:
patent: 4581621 (1986-04-01), Reed
patent: 5157467 (1992-10-01), Fujii
Hiroyuki Sakaki, "Scattering Suppression and High-Mobility Effect of Size-Quantized Electrons in . . . Structures", Japanese Journal of Applied Physics, vol. 19, No. 12, Dec., 1980, pp. L735-L738.
K. Onda et al., "Striped Channel Field Effect Transistors With A Modulation Doped Structure", IEDM 89, pp. 125-128.
Bowers Courtney A.
NEC Corporation
Wojciechowicz Edward
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