Method of forming by projection an integrated circuit pattern on

Details Method of forming by projection an integrated circuit pattern on Method of forming by projection an integrated circuit pattern on

1984-03-29

1986-11-04

Fields, Carolyn E.

X-ray or gamma ray systems or devices

Specific application

Lithography

2504922, 2504923, 353 69, 378 35, H01J 37304, G21K 504

Patent

active

046213716

ABSTRACT:
A method of forming by projection an integrated circuit pattern on a first semiconductor wafer, wherein a plurality of reference marks are projected onto a second semiconductor wafer by the irradiation of radiant rays from a projector apparatus used to form the integrated circuit pattern onto the first semiconductor wafer. The positions of the reference marks projected onto the second semiconductor wafer are measured, thereby measuring the projection distortion peculiar to the projector apparatus. As the next step, a projection mask used to form the integrated circuit pattern is produced with the use of the measured projection distortions which has a distortion opposite that of the projector so as to offset its projection distortion. The mark is mounted in the projector apparatus, and the radiant rays are irradiated onto the mask thus projecting the integrated circuit pattern onto the first semiconductor wafer.

REFERENCES:
patent: 3519346 (1970-07-01), Robbins
patent: 3573456 (1971-04-01), Beeh
patent: 4390788 (1983-06-01), Hayashi et al.
patent: 4455067 (1984-06-01), Hoppmann et al.
patent: 4463265 (1984-07-01), Owen et al.
patent: 4504558 (1985-03-01), Bohlen et al.
Proceedings on the Symposium on Electron and Ion Beam Science and Technology: 9th Int. Conf., pp. 126-136: E-Beam Direct Writing in Manufacturing, R. D. Moore, 1980.
IBM J. of Res. and Development (Nov. 1977) pp. 507-513, Correction of Nonlinear Deflection Distortion in a Direct Exposure Electron-Beam System; H. Engelke et al.

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