Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-02
1994-12-06
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257407, 257653, 257403, 257756, H01L 2978, H01L 2904, H01L 2906
Patent
active
053713966
ABSTRACT:
A field effect transistor includes a polycrystalline silicon gate having a semiconductor junction therein. The semiconductor junction is formed of first and second oppositely doped polycrystalline silicon layers, and extends parallel to the substrate face. The polycrystalline silicon gate including the semiconductor junction therein is perfectly formed by implanting ions into the top of the polycrystalline silicon gate simultaneous with implantation of the source and drain regions. The semiconductor junction thus formed does not adversely impact the performance of the field effect transistor, and provides a low resistance ohmic gate contact. The gate need not be masked during source and drain implant, resulting in simplified fabrication.
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Dennen Michael W.
Vinal Albert W.
Prenty Mark V.
Thunderbird Technologies, Inc.
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