Field-effect transistor having local threshold-adjust doping

Details Field-effect transistor having local threshold-adjust doping Field-effect transistor having local threshold-adjust doping

1995-09-12

2000-10-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, 257345, H01L 2976, H01L 2994, H01L 01062

Patent

active

061277002

ABSTRACT:
An insulated-gate field-effect transistor utilizes local threshold-adjust doping to control the voltage at which the transistor turns on. The local threshold-adjust doping is present along part, but not all, of the lateral extent of the channel. In the transistor structure, a channel zone laterally separates a pair of source/drain zones. The channel zone is formed with a main channel portion and a more heavily doped threshold channel portion that contains the local threshold-adjust doping. Gate dielectric material vertically separates the channel zone from an overlying gate electrode. The transistor is a long device in that the gate electrode is longer, preferably at least 50% longer, than the gate electrode of a minimum-sized transistor whose gate length is approximately the minimum feature size. The long-gate transistor is suitable for use in analog and high-voltage digital portions of a VLSI circuit.

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