Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-06-29
1993-05-25
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257330, 257343, H01L 2976
Patent
active
052143015
ABSTRACT:
A field effect transistor having regions (20, 20', and 20") which respectively function as a planar elevated surface for gate, drain, and source electrical contact, and method of fabrication. The transistor overlies a substrate (12) and is formed partially from active areas (14 and 14'). The regions (20, 20', and 20"), each underlie or are surrounded by a dielectric layer (22). A gate is formed by a gate layer (24). A source (30) is formed within region (20") and is electrically connected to active area (14'). A drain (30') and channel region are formed within region (20'). Electrical contact is made to the source (30), drain (30') and gate layer (24) by conductive layers (34", 34', and 34, respectively).
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"Impact of Surrounding Gate Transistor (SGT) for Ultra-High Density LSI's," Takato et al., IEEE Trans. Elect. Dev., vol. 38, No. 3, Mar. 1991, pp. 573-577.
Kosa Yasunobu
McFadden W. Craig
Witek Keith E.
King Robert L.
Loke Steven
Mintel William
Motorola Inc.
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