Field effect transistor having contact plugs in the source...

Details Field effect transistor having contact plugs in the source... Field effect transistor having contact plugs in the source...

2008-03-18

2008-03-18

Pham, Hoai v (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257SE27064

Reexamination Certificate

active

11591549

ABSTRACT:
A semiconductor device having a field effect transistor formed on a semiconductor layer on an insulator, comprising: a drain electrode wiring formed over a drain region of the field effect transistor; a source electrode wiring formed over a source region of the field effect transistor; first contact plugs connecting the drain region and the drain electrode wiring; and second contact plugs which connect the source region and the source electrode wiring, and the number of which is greater than the first contact plugs.

REFERENCES:
patent: 2004/0031004 (2004-02-01), Yoshioka
patent: 2004/0104452 (2004-06-01), Yamaguchi
patent: 2004/0232554 (2004-11-01), Hirano
patent: 11-354807 (1999-12-01), None
patent: 2000-031487 (2000-01-01), None
patent: 2004-072017 (2004-03-01), None
patent: 2004-349537 (2004-12-01), None

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