Field effect transistor having contact layer of transistor gate

Details Field effect transistor having contact layer of transistor gate Field effect transistor having contact layer of transistor gate

1997-03-24

1998-05-26

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257377, 257382, 257903, H01L 2701

Patent

active

057570507

ABSTRACT:
Improved field effect transistor (FET) structures are described. They include a thin film transistor (TFT), wherein a contact layer directly connects a diffusion region of the TFT to an active site of another device, e.g., another transistor. This invention is especially suitable for TFT's which are built on one or more conductive studs. Static random access memory (SRAM) cells incorporating one or more of the TFT's are also described. Moreover, this invention is directed to methods for preventing or alleviating the problems associated with gouging during formation of contact layers.

REFERENCES:
patent: 5156987 (1992-10-01), Sandhu et al.
patent: 5670812 (1997-09-01), Adler et al.

Affiliated with

Also associated with

Rating

Field effect transistor having contact layer of transistor gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor having contact layer of transistor gate , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor having contact layer of transistor gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1964565