Field effect transistor having capacitor between source and drai

Details Field effect transistor having capacitor between source and drai Field effect transistor having capacitor between source and drai

1996-02-29

1997-07-22

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257277, 257532, H01L 2976

Patent

active

056506457

ABSTRACT:
A semiconductor device having a field-effect transistor has a MOS capacitor formed on a principal surface of a semiconductor substrate of the semiconductor device, and connecting a first and a second electrodes of the MOS capacitor to a source electrode and a drain electrode, respectively, of the field-effect transistor.

REFERENCES:
patent: 3492511 (1970-01-01), Crawford
patent: 4974039 (1990-11-01), Schindler et al.
patent: 5086331 (1992-02-01), Hartgring et al.
patent: 5202751 (1993-04-01), Horiguchi

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