Field effect transistor having a stressed contact etch stop...

Details Field effect transistor having a stressed contact etch stop... Field effect transistor having a stressed contact etch stop...

2011-04-26

2011-04-26

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S240000, C438S289000, C438S303000, C438S525000, C257SE21252, C257SE21577

Reexamination Certificate

active

07932166

ABSTRACT:
By forming a highly non-conformal stressed overlayer, such as a contact etch stop layer, the efficiency of the stress transfer into the respective channel region of a field effect transistor may be significantly increased. For instance, non-conformal PECVD techniques may be used for forming highly stressed silicon nitride in a non-conformal manner, thereby achieving higher transistor performance for otherwise identical stress conditions.

REFERENCES:
patent: 7052946 (2006-05-01), Chen et al.
patent: 2005/0158955 (2005-07-01), Yang et al.
patent: 2007/0096220 (2007-05-01), Kim et al.
patent: 2008/0122003 (2008-05-01), Fang et al.
patent: 1 717 864 (2006-11-01), None
Widmann et al., “Technologie hochintegrierter Schaltungen,” p. 315.

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