Field effect transistor having a floating gate

Details Field effect transistor having a floating gate Field effect transistor having a floating gate

1998-04-28

2000-08-01

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

H01L 27108

Patent

active

060970561

ABSTRACT:
A field effect transistor which comprises a semiconductor substrate having a source region and a drain region separated by a channel region; a conductive floating gate formed over a first portion of the channel region adjacent to the doped source region and recessed into the semiconductor substrate; and being separated from the first portion of the channel region by a first insulation layer; and a conductive control gate formed substantially over but electrically isolated from the floating gate and formed over the entire channel region; along with a method for fabricating such is provided.

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