Field-effect transistor having a contact to one of its...

Details Field-effect transistor having a contact to one of its... Field-effect transistor having a contact to one of its...

2005-04-12

2005-04-12

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S299000, C438S301000, C438S303000, C438S595000

Reexamination Certificate

active

06878613

ABSTRACT:
A field-effect transistor is formed with a gate stack, which is patterned by a hard mask and contains a first part of a gate electrode and a second part of the gate electrode that is disposed on the first part. The second part of the gate electrode, which is disposed between the patterned hard mask and the first part of the gate electrode, is laterally recessed, so that the second part of the gate electrode, in a contact hole which is subsequently formed, is at a greater distance from a contact plug with which the contact hole is filled, in order to avoid short circuits.

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patent: 6259144 (2001-07-01), Gonzalez
patent: 04275434 (1992-10-01), None

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