Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-16
2007-10-16
Rose, Kiesha (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
Reexamination Certificate
active
10228847
ABSTRACT:
A field effect transistor has an insulating substrate, a semiconductor thin film formed on the insulating substrate, and a gate insulating film formed on the semiconductor thin film. A first gate electrode is formed on the gate insulating film. A first region and a second region having a first conductivity type are formed on or in a surface of the semiconductor thin film on opposite sides of the first gate electrode in a length direction thereof. A third region having a second conductivity type opposite the first conductivity type is arranged on or in the semiconductor film side by side with the second region in a width direction of the first gate electrode. A conductive thin film is connected with the second region and the third region. A second gate electrode is formed on the gate insulating film along the second region. A fourth region having the first conductivity type is formed on or in the semiconductor film on an opposite side of the second region with respect to the second gate electrode. One of the first and the fourth regions is used as an output region according to a circuit operation and without application of a fixed bias potential to the third region.
REFERENCES:
patent: 4375717 (1983-03-01), Tonnel
patent: 5528063 (1996-06-01), Blanchard
patent: 6441434 (2002-08-01), Long et al.
patent: 2001/0045600 (2001-11-01), Furuhata
Hasegawa Hisashi
Hayashi Yutaka
Osanai Jun
Takasu Hiroaki
Adams & Wilks
Hayashi Yutaka
Rose Kiesha
Seiko Instruments Inc.
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