Field-effect transistor for one-time programmable nonvolatile me

Details Field-effect transistor for one-time programmable nonvolatile me Field-effect transistor for one-time programmable nonvolatile me

1996-05-23

1998-11-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257322, 257326, 257589, 257901, 365 18, 365 28, 36518502, H01L 2960

Patent

active

058348131

ABSTRACT:
A least one one-time programmable nonvolatile (NV) memory element uses a field-effect transistor (FET) as a selectively programmed element. A short duration applied drain voltage exceeding the FET's drain-to-source breakdown voltage results in a drain source resistance which is substantially unaffected by the voltages typically applied at the gate terminal. Since the programmed resistance is less than 200 ohms and a high programming voltage is not required, the present invention compares favorably with antifuse nonvolatile memory techniques. The nonvolatile memory element is implemented without adding complexity to a very large scale integrated (VLSI) circuit process.

REFERENCES:
patent: 4087795 (1978-05-01), Rossler
patent: 4435788 (1984-03-01), Kitagawa et al.
patent: 5282158 (1994-01-01), Lee
patent: 5286992 (1994-02-01), Ahrens et al.
patent: 5428237 (1995-06-01), Yuzurihara et al.
patent: 5535158 (1996-07-01), Yamagata
patent: 5554553 (1996-09-01), Harari

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