Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-04
2000-03-21
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257391, 257392, 257393, 257356, H01L 2968
Patent
active
060406089
ABSTRACT:
A least one one-time programmable nonvolatile (NV) memory element uses a field-effect transistor (FET) as a selectively programmed element. A short duration applied drain voltage exceeding the FET's drain-to-source breakdown voltage results in a drain source resistance which is substantially unaffected by the voltages typically applied at the gate terminal. Since the programmed resistance is less than 200 ohms and a high programming voltage is not required, the present invention compares favorably with antifuse nonvolatile memory techniques. The nonvolatile memory element is implemented without adding complexity to a very large scale integrated (VLSI) circuit process.
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Li Wen
Ma Manny K. F.
Somasekharan Rajesh
Abraham Fetsum
Micro)n Technology, Inc.
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