Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-12-20
2011-10-11
Pert, Evan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C257S225000, C257S253000, C257SE29325
Reexamination Certificate
active
08035175
ABSTRACT:
A field effect transistor for detecting ionic material and a method of detecting ionic material using the field effect transistor. The field effect transistor for detecting ionic material includes a substrate formed of a semiconductor material, a source region and a drain region spaced apart from each other in the substrate and doped with an opposite conductivity type to that of the substrate, a channel region interposed between the source region and the drain region, an insulating layer disposed on the channel region and formed of an electrically insulating material, a first reference electrode disposed at an edge of the upper portion of the insulating layer and a second reference electrode disposed to be spaced apart from the insulating layer.
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Chung Won-seok
Lee Kyu-sang
Shim Jeo-young
Yoo Kyu-tae
Cantor & Colburn LLP
Pert Evan
Rodela Eduardo A
Samsung Electronics Co,. Ltd.
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