Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-04-08
1992-12-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
3073032, 330264, 257919, 365205, H01L 2702
Patent
active
051756048
ABSTRACT:
A field-effect transistor device comprising a p-type silicon substrate, a pair of n-channel MOS transistors, and a wiring means connecting the MOS transistors. The first MOS transistor has a gate electrode provided above the substrate and extending in one direction, and two regions formed in the substrate, located on two opposing sides of the gate electrode, and serving as a source and a drain. The second MIS transistor has a gate electrode provided above the substrate and extending in said one direction, and two regions formed in the substrate, located on two opposing sides of this gate electrode, and serving as a source and a drain. The wiring means includes bit lines BL and BL which permit the source-drain paths of the first and second MIS transistors to be oriented in the same direction.
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Bowers Courtney A.
James Andrew J.
Kabushiki Kaisha Toshiba
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