Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-27
2000-02-01
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257365, 257536, H01L 2978
Patent
active
060206136
ABSTRACT:
A semiconductor device includes a high-power output transistor chip in which transistor cells are connected in parallel, each transistor cell including stripe-shaped gate electrodes connected to a gate bus, stripe-shaped drain electrodes connected to a drain pad, and stripe-shaped source electrodes connected to a source pad, wherein the drain electrodes and the source electrodes are alternatingly arranged and pairs of source and drain electrodes face each other across one of the gate electrodes; and a resistor including a portion of the gate bus between adjacent transistor cells, for preventing oscillation between the adjacent transistor cells. Since the resistor serves as a loss component, oscillation due to an imbalance in characteristics between adjacent transistor cells is cancelled so that the synthesis efficiency of the transistor cells is improved. Furthermore, since the resistor is disposed between adjacent cells, this resistor does not act as a loss unless oscillation occurs due to an imbalance in characteristics between the adjacent cells. Thus, there is no possibility that the resistor might increase gate resistance or parasitic capacitance and, therefore, it is possible to stabilize the operation of the transistor by preventing oscillation, without reducing the gain of the transistor.
REFERENCES:
patent: 4034399 (1977-07-01), Brukier et al.
patent: 4430623 (1984-02-01), Bert et al.
patent: 4771195 (1988-09-01), Stein
patent: 4939485 (1990-07-01), Eisenberg
patent: 5345194 (1994-09-01), Nagasako
patent: 5563439 (1996-10-01), Chung et al.
patent: 5652452 (1997-07-01), Asano
patent: 5677555 (1997-10-01), Kalpakjian et al.
patent: 5786627 (1998-07-01), Inoue et al.
patent: 5883407 (1999-03-01), Kunii et al.
Komaru Makio
Udomoto Junichi
Hardy David B.
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Field effect transistor array including resistive interconnectio does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor array including resistive interconnectio, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor array including resistive interconnectio will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-939463