Field effect transistor and method of manufacturing the same

Details Field effect transistor and method of manufacturing the same Field effect transistor and method of manufacturing the same

2008-01-29

2008-01-29

Nguyen, Cuong (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S289000, C438S294000

Reexamination Certificate

active

11069945

ABSTRACT:
A field effect transistor (FET) and related manufacturing method are disclosed, wherein an active region of a semi-conductor substrate is embossed by a first trench structure. A second trench structure and filling shallow trench insulator laterally defines the active region. Sidewalls of the trenches forming the first trench structure descend to a bottom face with a positive sloped, such that the intersection of the respective sidewalls with the bottom face form an obtuse angle.

REFERENCES:
patent: 4353083 (1982-10-01), Trudel et al.
patent: 5675164 (1997-10-01), Brunner et al.
patent: 6849518 (2005-02-01), Parat et al.
patent: 6869848 (2005-03-01), Kwak
patent: 2002/0089019 (2002-07-01), Fu
patent: 2004/0072412 (2004-04-01), Kim

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