Field effect transistor and method of manufacturing the same

Details Field effect transistor and method of manufacturing the same Field effect transistor and method of manufacturing the same

2006-08-15

2006-08-15

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S354000

Reexamination Certificate

active

07091561

ABSTRACT:
There is provided a field effect transistor including: a first insulating film formed on a semiconductor substrate, and including at least a metal oxide having a crystallinity and different in a lattice distance of a crystal on an interface from the semiconductor substrate; a convex channel region formed above the first insulating film, and different in the lattice distance from the semiconductor substrate; a source region and a drain region formed above the first insulating film on side surfaces of the channel region, respectively; a second insulating film formed right above the channel region; a gate insulating film formed on a side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain regions are formed; and a gate electrode formed through the gate insulating film on at least the side surface of the channel region different from the side surfaces of the channel region on which the source region and the drain region are formed.

REFERENCES:
patent: 2003/0057491 (2003-03-01), Mitani et al.
patent: 2003/0183885 (2003-10-01), Nishikawa et al.
patent: 2005/0258477 (2005-11-01), Saito
patent: 2001-284558 (2001-10-01), None
patent: 2002-118255 (2002-04-01), None
patent: 2002-176061 (2002-06-01), None
Uchida, K., et al., “Experimental Study on Carrier Transport Mechanism in Ultrathin-Body SOI n- and p-MOSFETs with SOI Thickness less than 5nm”, IEDM Tech Dig., pp. 47-50, (2002).
Mizuno, T. et al., “High Performance Strained-Si p-MOSFETs on SiGe-on-Insulator Substrates Fabricated by SIMOX Technology”, IEDM 99, pp. 934-936, (1999).

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