Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Kang, Donghee (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S341000, C257S344000, C257S365000, C438S286000, C438S306000
Reexamination Certificate
active
06870219
ABSTRACT:
A field effect transistor includes a drain region (12) having a first portion (18) and a second portion (20), with the second portion being more lightly doped than the first portion. A channel region (14) is adjacent to the second portion and a drain electrode (24) overlies the drain region. A gate electrode (16) overlies the channel region. A shield structure (30) overlies the drain region and has a first section (32) at a first distance (33) from a semiconductor substrate (10) and a second section (34) at a second distance (35) from the semiconductor substrate, the second distance being greater than the first distance. In a particular embodiment the FET includes a shield structure wherein the first and second sections are physically separate. The location of these shield sections may be varied within the FET, and the potential of each section may be independently controlled.
REFERENCES:
patent: 4757362 (1988-07-01), Biwa et al.
patent: 4766474 (1988-08-01), Nakagawa et al.
patent: 5119149 (1992-06-01), Weitzel et al.
patent: 5252848 (1993-10-01), Adler et al.
patent: 5898198 (1999-04-01), Herbert et al.
patent: 5912490 (1999-06-01), Hebert et al.
patent: 6091110 (2000-07-01), Hebert et al.
patent: 6222229 (2001-04-01), Hebert et al.
patent: 6448611 (2002-09-01), Oh
patent: 6465845 (2002-10-01), Baek
patent: WO 0049663 (2000-08-01), None
patent: 58137256 (1983-08-01), None
Fujishima, et al.,A 700V Lateral Power MOSFET with Narrow Gap Double Metal Field Plates Realizing Low On-resistance and Long-term Stability of Performance,2001 Int'l Symposium on Power Semiconductor Devices & ICs, Osaka, pp. 255-258.
Lee, et al.,High Performance Extended Drain MOSFETs(EDMOSFETs)with Metal Field Plate,IEEE, 1999, pp. 249-252.
Bryan Cave LLP
Kang Donghee
Motorola Inc.
LandOfFree
Field effect transistor and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and method of manufacturing same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3443751