Field effect transistor and method of manufacturing same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S335000, C257S341000, C257S344000, C257S365000, C438S286000, C438S306000

Reexamination Certificate

active

06870219

ABSTRACT:
A field effect transistor includes a drain region (12) having a first portion (18) and a second portion (20), with the second portion being more lightly doped than the first portion. A channel region (14) is adjacent to the second portion and a drain electrode (24) overlies the drain region. A gate electrode (16) overlies the channel region. A shield structure (30) overlies the drain region and has a first section (32) at a first distance (33) from a semiconductor substrate (10) and a second section (34) at a second distance (35) from the semiconductor substrate, the second distance being greater than the first distance. In a particular embodiment the FET includes a shield structure wherein the first and second sections are physically separate. The location of these shield sections may be varied within the FET, and the potential of each section may be independently controlled.

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Fujishima, et al.,A 700V Lateral Power MOSFET with Narrow Gap Double Metal Field Plates Realizing Low On-resistance and Long-term Stability of Performance,2001 Int'l Symposium on Power Semiconductor Devices & ICs, Osaka, pp. 255-258.
Lee, et al.,High Performance Extended Drain MOSFETs(EDMOSFETs)with Metal Field Plate,IEEE, 1999, pp. 249-252.

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