Field effect transistor and method of fabrication

Details Field effect transistor and method of fabrication Field effect transistor and method of fabrication

2007-02-20

2007-02-20

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S310000, C257S347000, C257S348000, C257S349000, C257S350000, C257S351000, C257S352000, C257S353000, C257S354000, C257S507000, C257S768000, C257S798000

Reexamination Certificate

active

10922317

ABSTRACT:
The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.

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