Field-effect transistor and method for producing the same

Details Field-effect transistor and method for producing the same Field-effect transistor and method for producing the same

1996-05-30

1999-03-23

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257623, H01L 2976

Patent

active

058863893

ABSTRACT:
A field-effect transistor includes a semiconductor substrate including a source region, a drain region and a channel region located between the source and drain regions; a gate insulating film formed on at least the channel region of the semiconductor substrate; and a gate electrode formed on the gate insulating film. The surface the semiconductor substrate includes a plural of terraces having crystallographically smooth planes and at least one step located in a boundary portion of the plurality of terraces. The step extends substantially along a channel length direction.

REFERENCES:
patent: 5422306 (1995-06-01), Niwa et al.
patent: 5480492 (1996-01-01), Udagawa et al.
M. Niwa et al., "SiO.sub.2 /Si Interfaces Studied by Scanning Tunneling Microscopy and High Resolution Transmission Electron Microscopy", J. Electrochem. Soc., vol. 139, No. 3, pp. 901-906, (Mar. 1992).
T. Sato et al., "Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces", Physical Review B., vol. 4, No. 6, pp. 1950-1960, (Sep. 1971).
J. Chung et al., "The Effects of Off-Axis Substrate Orientation on MOSFET Characteristics", Department of Electrical Engineering and Computer Sciences, University of California, pp. 26.6.4, Mar. 12, 1989.

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