Field effect transistor and method for manufacturing same

Details Field effect transistor and method for manufacturing same Field effect transistor and method for manufacturing same

2004-07-28

2009-11-24

Purvis, Sue (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29129

Reexamination Certificate

active

07622763

ABSTRACT:
A field effect transistor comprises a SiC substrate1, a source3aand a drain3bformed on the surface of the SiC substrate1, an insulating structure comprising an AlN layer5formed in contact with the SiC surface and having a thickness of one molecule-layer or greater, and a SiO2layer formed thereon, and a gate electrode15formed on the insulation structure. Leakage current can be controlled while the state of interface with SiC is maintained in a good condition.

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International Search Report of PCT/JP2004/010696 mailed Nov. 9, 2004.
James Kolodzey et al., “Electrical Conduction and Dielectric Breakdown in Aluminum Oxide Insulators on Silicon”, IEEE Transactions on Electron Devices., vol. 47, No. 1, Jan. 2000, pp. 121-128.
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Zetterling, C.-M., et al., “SiC MISFETs with MBE-grown AIN Gate Dielectric”, Materials Science Forum vols. 338-342 (2000) pp. 1315-1318.

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