Field effect transistor and method for fabricating the same

Details Field effect transistor and method for fabricating the same Field effect transistor and method for fabricating the same

2005-12-09

2010-11-16

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257S187000, C257S189000, C257S200000, C257S201000, C257S283000, C257S284000, C257S330000, C257S334000, C257SE29201, C257SE31019, C257SE31026, C257SE31059, C257SE31073, C257SE31082, C257SE31091, C257SE31093, C257SE29089, C257SE29090, C257SE29100, C438S259000, C438S270000

Reexamination Certificate

active

07834380

ABSTRACT:
A field effect transistor includes a first semiconductor layer made of a multilayer of a plurality of semiconductor films and a second semiconductor layer formed on the first semiconductor layer. A source electrode and a drain electrode are formed on the second semiconductor layer to be spaced from each other. An opening having an insulating film on its inner wall is formed in a portion of the second semiconductor layer sandwiched between the source electrode and the drain electrode so as to expose the first semiconductor layer therein. A gate electrode is formed in the opening to be in contact with the insulating film and the first semiconductor layer on the bottom of the opening.

REFERENCES:
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patent: 5514605 (1996-05-01), Asai et al.
patent: 5623152 (1997-04-01), Majumdar et al.
patent: 5789767 (1998-08-01), Omura
patent: 2004/0183096 (2004-09-01), Khan et al.
patent: 2002-184972 (2002-06-01), None
patent: 2004079577 (2004-03-01), None
Wu et al., “3.5 Watt AlGaN/GaN HEMTs and Amplifies at 35 GHz”, International Electron Devices Technical Meeting, IEEE, 2003, pp. 579-581.

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