Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-10-10
2006-10-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S314000, C257S315000, C257S329000, C257S330000, C257S331000, C257S622000, C257S623000, C257SE21609, C257SE21693, C257SE29201
Reexamination Certificate
active
07119384
ABSTRACT:
The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channel regions connect directly to the planar channel region (vertical extended channel regions). Said field effect transistor has the advantage that a significant increase in the effective channel width for the current flow IONcan be guaranteed relative to conventional transistor structures used up until the present, without having to accept a reduction in the achievable integration density. Said field effect transistor furthermore has a low reverse current IOFF. The above advantages are achieved without the thickness of the gate insulators up to the region of the charge transfer tunnels having to be reduced or a reduced stability.
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Popp Martin
Richter Frank
Temmler Dietmar
Wich-Glasen Andreas
Fenty Jesse A.
Infineon - Technologies AG
Jackson Jerome
Morrison & Foerster / LLP
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