Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S353000, C257S401000, C257SE29137
Reexamination Certificate
active
07999321
ABSTRACT:
A field-effect transistor comprising a movable gate electrode that suppresses a leakage current from the gate electrode, and has a large current drivability and a low leakage current between a source and a drain. The field-effect transistor comprises: an insulating substrate; a semiconductor layer of triangle cross-sectional shape formed on the insulating substrate, having a gate insulation film on a surface, and forming a channel in a lateral direction; fixed electrodes that are arranged adjacent to both sides of the semiconductor layer and in parallel to the semiconductor layer, each of the electrodes having an insulation film on a surface; a source/drain formed at the end part of the semiconductor layer; and the movable gate electrode formed above the semiconductor layer and the fixed electrodes with a gap.
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Endo Kazuhiko
Liu Yongxun
Masahara Meishoku
Matsukawa Takashi
Ouchi Shinichi
Ho Tu-Tu
National Institute of Advanced Industrial Science and Technology
Volpe and Koenig P.C.
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