Field effect transistor and fabricating method thereof

Details Field effect transistor and fabricating method thereof Field effect transistor and fabricating method thereof

1994-04-06

1995-03-14

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257472, 257618, 257622, 257284, 257286, H01L 2948, H01L 2956, H01L 2964

Patent

active

053979079

ABSTRACT:
A MESFET which includes a semi-insulating substrate, e.g., a GaAs substrate, an insulating layer formed on a portion of the upper surface of the substrate, a first semiconductor layer formed on the upper surface of the substrate adjacent to opposite sides of the insulating layer, the first semiconductor layer having sidewalls defining a void therein, a nitride layer formed on a portion of the upper surface of the insulating layer, an oxide layer formed on the nitride layer, a second semiconductor layer formed on the sidewalls of the first semiconductor layer and in covering relationship to the void, a gate electrode formed on at least a portion of the upper surface of the second semiconductor layer, and, source and drain electrodes formed on the upper surface of the first semiconductor layer, on opposite sides of the gate electrode.

REFERENCES:
patent: 5274257 (1993-12-01), Kim et al.

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