Field effect transistor and CMOS element having dopant exponenti

Details Field effect transistor and CMOS element having dopant exponenti Field effect transistor and CMOS element having dopant exponenti

1997-01-14

1998-11-24

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 69, 257350, 257351, 257335, 257338, 257336, 257655, H01L 2712, H01L 27105, H01L 29786

Patent

active

058411704

ABSTRACT:
A field effect transistor is fabricated on an SOI substrate. N-type source and drain regions are arranged apart from each other in a semiconductor thin film of the SOI substrate. A P-type channel region is formed between the source and drain regions. Moreover, a gate electrode is formed over the channel region to cover the channel region through a gate oxide film. Extreme portions of the channel region, adjacent to the source and drain regions, have higher doping concentrations than in a center portion thereof. Furthermore, the gradient of the doping profile in the channel region is adjusted so as to reduce the current gain of a parasitic transistor in the field effect transistor. This structure enables a reduction of the channel length of the field effect transistor to the sub-half-micron order without deteriorating the electrical characteristics of the field effect transistor.

REFERENCES:
patent: 5449937 (1995-09-01), Arimura
patent: 5477073 (1995-12-01), Wakai et al.
patent: 5567966 (1996-10-01), Hwang
Y. Okumura, et al., "Source-to-Drain Nonuniformly Doped Channel (NUDC) MOSFET Structures for High Current Drivability and Threshold Voltage Controllability," IEEE Trans ED, vol. 39, No. 11, Nov. 1992, pp. 2541-2552.
Apr. 1995 Symposium on VLSI Technology Digest of Technical Papers, Terauchi et al pp. 35 & 36; Supression of the Floating-Body Effects in SOI MOSFETs by Bandgap Engineering.
"Reduction of Kink Effect in Thin-film SOI MOSFETS", IEEE Electron Device Letters, Feb. 1998, USA, vol. 9, NR. 2, pp. 97-99, ISSN 0741-3106 XP002056395.

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