Field effect transistor and application device thereof

Details Field effect transistor and application device thereof Field effect transistor and application device thereof

2007-04-10

2007-04-10

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S347000, C257S401000

Reexamination Certificate

active

10864098

ABSTRACT:
The present invention provides a MOSFET having a low on-state resistance and a high withstand voltage as well as a small output capacitance (C(gd), etc.). The MOSFET has a p-type base layer4and a n-type source layer5selectively formed on the surface of the p-type base layer.4. A n-type drain layer7is formed in a position apart from the p-type base layer4. On the surface of the region between the p-type base layer4and the n-type drain layer7, a n-type drift semiconductor layer12and a p-type drift semiconductor layer13are alternately arranged from the p-type base layer4to the n-type drain layer7. Further, in the region between the n-type source layer5and the n-type drain layer7, a gate electrode15is formed via a gate insulating film14. With the structure, the neighboring region of the gate electrode is depleted by a built in potential between the n-type drift semiconductor layer12and the p-type drift semiconductor layer13or by the potential of the gate electrode, when the gate electrode, source electrode, and drain electrode are at0potential.

REFERENCES:
patent: 3631310 (1971-12-01), Das
patent: 6023090 (2000-02-01), Letavic et al.
patent: 6049109 (2000-04-01), Omura et al.
patent: 6627948 (2003-09-01), Fujihira
patent: 6777746 (2004-08-01), Kitagawa et al.
patent: 2001/0050394 (2001-12-01), Onishi et al.
patent: 08-065127 (1996-03-01), None

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