Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-03-27
2004-08-17
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S341000, C257S401000, C257S347000
Reexamination Certificate
active
06777746
ABSTRACT:
CROSS-REFERENCE TO RELATED APPICATIONS
This application is based upon and claims the benefit of priority from the prior Japanese Patent Applications No.2002-088821 filed on Mar. 27, 2002, and No.2003-078462 filed on Mar. 20, 2003; the entire contents of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
The present invention relates to a field effect transistor and more particularly to a field effect transistor having low on-state resistance and small output capacitance and also to an application device thereof.
FIGS. 1
to
3
are drawings showing a structure of multi-resurf MOSFET which is a conventional horizontal field effect transistor (hereinafter, field effect transistor is abbreviated to MOSFET) having low on-state resistance or MOSFET called a super junction structure, and
FIG. 1
is a perspective view thereof, wherein
FIG. 2
is a plan view thereof, and
FIG. 3
a
,
FIG. 3
b
, and
FIG. 3
c
are cross sectional views of the drawing shown in
FIG. 2
which is cut respectively along the line segments A-A′, B-B′, and C-C′.
As shown in the drawings, on a surface of a p-type semiconductor substrate
201
, a p-type base layer
204
is selectively formed, on the surface of which a high concentration n-type source layer
205
and a high concentration p-type contact layer
206
are selectively formed. Further, on the surface of the p-type semiconductor substrate
201
, an n-type drain layer
209
is formed apart from the p-type base layer
204
. On the n-type source layer
205
and the p-type contact layer
206
, a source electrode
210
is formed and on the n-type drain layer
209
, a drain electrode
211
is formed. On the bottom of the p-type semiconductor substrate
201
, a substrate electrode
212
is mounted, which is biased by a same potential as of a source electrode
210
.
An n-type semiconductor layer
202
and a p-type semiconductor layer
203
in a stripe shape are alternately arranged between the p-type base layer
204
and the n-type drain layer
209
, as a drift layer. Namely, the n-type semiconductor layer
202
and the p-type semiconductor layer
203
are alternately arranged along a direction from the p-type base layer
204
toward the n-type drain layer
209
, to which the stripe shape layers extend nearly perpendicular. Further, a gate electrode
208
is formed via a gate oxide film
207
on a surface of the p-type base layer
204
between the n-type source layer
205
or the n-type semiconductor layer
202
and the p-type semiconductor layer
203
.
The type of MOSFET as described above is characterized in that the n-type semiconductor layer
202
and the p-type semiconductor layer
203
are formed in a stripe shape and alternately arranged (the multi-resurf structure, super junction structure) as a drift layer. Therefore, it is also characterized in that the drift layer is apt to be depleted, and a dose concentration of the drift layer can be increased. Thus the on-state resistance can be reduced.
However, in the configuration of the aforementioned conventional low on-state resistance MOSFET, electrons flow in the n-type semiconductor layer
202
of the drift layer but do not flow in the p-type semiconductor layer
203
. Thus there is a defect that even if the reduced ratio of the effective sectional area of the n-type semiconductor layer
202
is compensated by increasing the concentration of the n-type semiconductor layer
202
in the super junction structure and by lowering the resistance, a sufficient effect cannot be expected for realizing the low on-state resistance of the whole element.
It has been also known that the MOSFET having the multi-resurf structure (super junction structure) is applied to a vertical MOSFET instead of the lateral MOSFET described above. However, even by use of such a structure, the same defect is caused as described above with respect to the horizontal type element, in a design of an element having a withstand voltage of several hundreds volt or less. Thus, enough advantages of applying the conventional multi-resurf structure or super junction structure cannot be expected for an improvement in the characteristic of the MOSFET of a comparatively low withstand voltage.
Therefore, the present invention was made with the foregoing in view and it is an object of the present invention to provide a field effect transistor capable of realizing a low on-state resistance and low output capacitance and to provide its application device, even in a design of an element having a comparatively low withstand voltage (several tens volt to 100 V or so).
BRIEF SUMMARY OF THE INVENTION
According to an aspect of the present invention, a field effect transistor is provided having a base layer of a first conductivity type formed on a substrate surface, a source layer of a second conductivity type selectively formed on a surface of the base layer, a drain layer of the second conductivity type formed on the substrate apart from the base layer, a semiconductor layer which is formed in a region between the base and the drain layer and has a higher resistance than the base layer, and a gate electrode at least formed on the surface of the base layer via a gate insulating film.
According to another aspect of the present invention, a field effect transistor is provided having a base layer of a first conductivity type formed on a surface of a substrate, a source layer of a second conductivity type selectively formed on a surface of the base layer, a drain layer of the second conductivity type formed on the substrate apart from the base layer, a drift semiconductor layer of the first conductivity type extended from the base layer to the drain layer in a region between the base layer and the drain layer, a drift semiconductor layer of the second conductivity type formed together with the drift semiconductor layer of the first conductivity type, and a gate electrode formed on almost overall surfaces of the drift semiconductor layer of the first conductivity type and drift semiconductor layer of the second conductivity type via a gate insulating film.
According to other aspect of the present invention, a field effect transistor is provided having a base layer of a first conductivity type formed on a surface of an insulating substrate, a source layer of a second conductivity type selectively formed in the base layer, a drain layer of the second conductivity type formed on the insulating substrate apart from the base layer, a drift layer formed in a region between the base layer and the drain layer, and a gate electrode formed on a surface of the base layer via a gate insulating film.
According to the other aspect of the present invention, a photo-relay is provided having a light emission element to which a switching control input signal is applied, a light electromotive force element for receiving light emitted from the light emission element and generating an output DC voltage, and at least two field effect transistors connected in series with each other having a source electrode and a gage electrode commonly connected, which is provided with an output voltage of the light electromotive force element is supplied, wherein the field effect transistors are composed of a field effect transistor defined in either one of claims 1 to 24 and the output voltage of said light electromotive force element given to the gate electrode is equal to or higher than a withstand voltage applied between the source electrode and the drain electrode of the field effect transistors.
REFERENCES:
patent: 3631310 (1971-12-01), Das
patent: 6023090 (2000-02-01), Letavic et al.
patent: 6627948 (2003-09-01), Fujihira
patent: 2001/0050394 (2001-12-01), Onishi et al.
patent: 08-065127 (1996-03-01), None
Aizawa Yoshiaki
Kitagawa Mitsuhiko
Hogan & Hartson LLP
Prenty Mark V.
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