Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-27
2006-06-27
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000, C257S355000, C257S335000
Reexamination Certificate
active
07067878
ABSTRACT:
A MOS field effect transistor. A field relaxation layer of a gate overlap structure is disposed in contact with a drain region for the purpose of relaxation of the electric field by increasing a distance between the field relaxation layer and a high-density layer. The electric field relaxation can further be promoted because the equipotential lines are bent by a gate insulation film. A punch-through stopper layer of a gate overlap structure is disposed in contact with a source region for suppressing spreading of a depletion layer toward the source region. The length of a gate electrode can be realized in a miniaturized size.
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IEDM 89, “Asymmetrical Halo Source GOLD drain (HS-GOLD) Deep Sub-half Micron n-MOSFET Design for Reliability and Performance” pp. 617-620.
Ohyanagi Takasumi
Watanabe Atsuo
Antonelli, Terry Stout and Kraus, LLP.
Hitachi , Ltd.
Le Dung A.
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