Field-effect transistor

Details Field-effect transistor Field-effect transistor

2006-03-07

2006-03-07

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S337000, C257S327000, C257S347000

Reexamination Certificate

active

07009263

ABSTRACT:
A field-effect transistor includes a semiconductor substrate, a source region formed in the semiconductor substrate, a drain region formed in the semiconductor substrate, a channel region formed in the semiconductor substrate, wherein the source region is connected to a source terminal electrode and the drain region is connected to a drain terminal electrode, wherein the channel region comprises a first narrow width channel region and a second narrow width channel region connected in parallel regarding the source terminal electrode and the drain terminal electrode, and wherein the first narrow width channel region and/or the second narrow width channel region comprise lateral edges narrowing the width of the narrow width channel region is such a way that a channel formation in the narrow width channel region is influenced by a mutually influencing effect of the lateral edges, and a gate electrode arranged above the first and second narrow width channel regions.

REFERENCES:
patent: 4996574 (1991-02-01), Shirasaki
patent: 6111296 (2000-08-01), Yamazaki et al.
patent: 2002/0011644 (2002-01-01), Lee

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